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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD16HHF1
OUTLINE DRAWING
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
FEATURES
High power gain: Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz
4
note(3)
APPLICATION
For output stage of high power amplifiers in HF band mobile radio sets.
1
23
PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) note: (1)Torelance of no designation means typical value. Dimension in mm. (2) :Dipping area
RoHS COMPLIANT
:Copper of the ground work is exposed in case of frame separation. (3) RD16HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the lot marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD16HHF1
MITSUBISHI ELECTRIC
1/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain to source current Channel temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 50 V Vds=0V +/- 20 V Tc=25C 56.8 W Zg=Zl=50 0.8 W 5 A C 150 -40 to +150 C C/W junction to case 2.2
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C , UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.4W, f=30MHz, Idq=0.5A VDD=15.2V,Po=16W(Pin Control) f=30MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) MIN 1.7 16 55 LIMITS TYP MAX. 10 1 4.7 19 65 No destroy UNIT uA uA V W % -
Note : Above parameters , ratings , limits and conditions are subject to change.
RD16HHF1
MITSUBISHI ELECTRIC
2/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD16HHF1
Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0
Vds=10V Ta=+25C
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE
80 CHANNEL DISSIPATION Pch(W)
60 Ids(A)
40 20
0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
0
2
4 6 Vgs(V)
8
10
Vds-Ids CHARACTERISTICS 8
Ta=+25C Vgs=10V
Vds VS. Ciss CHARACTERISTICS 60 50
Vgs=9V
6 Ids(A)
40
Vgs=8V
Ciss(pF)
4
Vgs=7V
30 20 10 0 0 10 Vds(V) 20 30 Ta=+25C f=1MHz
2
Vgs=6V
0 0 2 4 6 Vds(V) 8 10
Vgs=5V
Vds VS. Coss CHARACTERISTICS 100 Ta=+25C Ta=+25C 80 f=1MHz f=1MHz Coss(pF) 60 40 20 0 0 10 Vds(V) 20 30 Ta=+25C f=1MHz Crss(pF) 10 8 6 4 2 0
Vds VS. Crss CHARACTERISTICS
Ta=+25C f=1MHz
0
10 Vds(V)
20
30
RD16HHF1
MITSUBISHI ELECTRIC
3/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD16HHF1
Pin-Po CHARACTERISTICS
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS 50 Po(dBm) , Gp(dB),Idd(A) 40 30 20 10 0 -10 0 10 Pin(dBm) 20 30
Ta=+25C f=30MHz Vdd=12.5V Idq=0.5A Gp
100
Po
25 20 Pout(W) Idd(A) d(%) 15 10 5 0 0.0 0.2 0.4 Pin(W) 0.6 0.8
Po
100 80 d(%)
10 Jan 2006
80
60 40 20 0
d Ta=+25C f=30MHz Vdd=12.5V Idq=0.5A Idd
60 40 20 0
Vdd-Po CHARACTERISTICS 30 25 20 Po(W) 15 10 5 0 4 6 8 10 Vdd(V) 12 14
Ta=25C f=30MHz Pin=0.4W Idq=0.5A Zg=ZI=50 ohm
Vgs-Ids CHARACTERISTICS 2 6 5 8
Vds=10V Tc=-25~+75C +25C -25C
Po
6 Idd(A) Ids(A)
4
Idd
3 2 1 0
4
+75C
2
0 2 4 6 Vgs(V) 8 10
RD16HHF1
MITSUBISHI ELECTRIC
4/8
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
TEST CIRCUIT(f=30MHz)
V gg
Vdd
C1 L2 8.2K ohm C1
330uF,50V
220pF 68pF 100pF 1K ohm C2 RF-IN 1 ohm 220pF 20pF 100pF 82pF L3 C1 L1 RD 16HHF1
10uF,50V *3pcs C1 88pF C2 RF-OUT L4 100pF L5
200pF
200pF
5 15 65 75 85 90 100
1.5 15 34 41 43 45 67 91 100
C 1:100pF,0.022uF,0.1uF in parallel C 2:470pF*2 in parallel L1:10Turns,I.D 8mm,D 0.9mm copper wire L2:10Turns,I.D 6mm,D 1.6mm silver plateted copper wire L3:9Turns,I.D 5.6mm,D 0.9mm copper wire L4:4Turns,I.D 5.6mm,D 0.9mm,P =0.5mm copper wire L5:5Turns,I.D 5.6mm,D 0.9mm,P =1mm copper wire / D imensions:mm Note:Board material-teflon substrate micro strip line width=4.2mm/50 ohm,er:2.7,t=1.6mm
RD16HHF1
MITSUBISHI ELECTRIC
5/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
Zo=50
f=30MHz Zout
f=30MHz Zin
Zin , Zout f (MHz) 30 Zin (ohm) 20.02-j89.42 Zout (ohm) 2.99-j3.66 Conditions Po=20W, Vdd=12.5V,Pin=0.4W
RD16HHF1
MITSUBISHI ELECTRIC
6/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
RD16HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA)
Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.928 0.761 0.676 0.650 0.679 0.709 0.742 0.775 0.801 0.826 0.844 0.861 0.874 0.884 0.892 0.900 0.903 0.908 0.912 0.912 0.913 0.913 (ang) -43.2 -96.8 -121.9 -145.8 -156.4 -162.7 -168.0 -173.0 -177.7 177.7 173.2 169.0 164.8 160.7 156.9 153.0 149.1 145.5 141.7 137.9 134.3 130.7 S21 (mag) (ang) 50.035 150.2 32.680 117.1 22.018 101.3 11.543 81.0 7.560 66.2 5.380 55.7 4.126 45.9 3.208 36.9 2.592 29.6 2.133 22.6 1.775 16.6 1.509 11.3 1.283 5.9 1.114 2.1 0.974 -1.9 0.855 -5.3 0.759 -8.4 0.678 -11.3 0.614 -13.5 0.559 -15.3 0.509 -17.3 0.467 -17.9 S12 (mag) 0.013 0.025 0.027 0.025 0.023 0.022 0.026 0.034 0.045 0.056 0.069 0.081 0.093 0.104 0.117 0.129 0.140 0.150 0.161 0.172 0.180 0.190 (ang) 60.6 34.3 24.3 20.3 27.0 46.4 63.2 74.4 78.3 78.4 78.1 75.3 73.1 69.8 67.2 63.7 60.6 56.8 53.8 50.4 47.1 43.6 (mag) 0.705 0.588 0.540 0.543 0.586 0.633 0.698 0.727 0.769 0.805 0.822 0.851 0.867 0.877 0.894 0.897 0.904 0.914 0.915 0.917 0.922 0.920 S22 (ang) -44.6 -92.6 -116.9 -138.4 -147.1 -153.2 -158.1 -163.2 -168.0 -172.8 -176.8 178.9 174.7 170.9 166.9 163.4 159.6 155.9 152.9 149.0 145.4 142.4
RD16HHF1
MITSUBISHI ELECTRIC
7/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD16HHF1
MITSUBISHI ELECTRIC
8/8
10 Jan 2006

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